According to a ctee.com.tw report, Samsung Electronics (三星) has signed a memorandum of understanding (MOU) with networking chip maker Broadcom under which the two companies will jointly build next-generation AI infrastructure over the next five years, with the collaboration valued at up to $200 billion. The same report frames the deal as part of Samsung's differentiated strategy to challenge TSMC's dominance of the foundry market.
technews.tw, reporting separately on the agreement, states that the partnership's value is expected to exceed $200 billion before 2030 — a figure consistent with ctee.com.tw's "up to $200 billion" estimate, though phrased as a longer-term projection rather than a five-year total.
Per the collaboration plan reported by ctee.com.tw, Samsung will provide Broadcom with a 2nm Gate-All-Around (GAA) process along with its latest-generation High Bandwidth Memory (HBM4) for use in Broadcom's next-generation AI accelerators. Beyond wafer manufacturing, ctee.com.tw also reports that Samsung will in the future introduce the more advanced HBM4E product to further improve compute performance and bandwidth for AI chips.
technews.tw adds a specific application: Samsung says the agreement stipulates that Broadcom's next-generation communication chips, designed for high-speed data transfer, will be produced on a Samsung process node below 2nm.
ctee.com.tw cites Counterpoint Research data showing that in the first quarter of this year, TSMC held 73% of the global foundry market while Samsung held just 7%. The same report notes that while TSMC holds a clear advantage in advanced process technology, yield, and advanced packaging, it operates a pure-play foundry model and does not itself produce DRAM or HBM memory products.
technews.tw reports that Samsung co-CEO and semiconductor business head Young Hyun Jun (全永鉉) said last month he had discussed next-generation foundry cooperation with NVIDIA CEO Jensen Huang (黃仁勳), including future HBM4E and HBM5 products. The same report notes that Samsung last year already won a $16.5 billion contract to produce logic chips for Tesla.
| Metric | Figure | Source |
|---|---|---|
| Samsung-Broadcom MOU duration | 5 years | ctee.com.tw |
| Samsung-Broadcom deal value (headline estimate) | up to $200 billion | ctee.com.tw |
| Samsung-Broadcom deal value by 2030 | more than $200 billion | technews.tw |
| TSMC global foundry market share (Q1 this year) | 73% | Counterpoint Research, via ctee.com.tw |
| Samsung global foundry market share (Q1 this year) | 7% | Counterpoint Research, via ctee.com.tw |
| Samsung-Tesla logic chip contract (last year) | $16.5 billion | technews.tw |
Taken together, the two reports describe a Samsung strategy built around bundling foundry and memory in a way TSMC's pure-play model cannot match — ctee.com.tw notes TSMC does not produce DRAM or HBM, while the Broadcom MOU explicitly pairs Samsung's 2nm GAA process with HBM4 and future HBM4E supply. That bundled pitch is landing against a wide share gap: Counterpoint Research's 73%-to-7% split shows how far Samsung trails TSMC in foundry share even as it stacks up large customer commitments — the up-to-$200-billion Broadcom MOU, the $16.5 billion Tesla logic-chip contract from last year, and Young Hyun Jun's reported discussions with NVIDIA's Jensen Huang over future HBM4E and HBM5 cooperation.
According to ctee.com.tw, the five-year MOU is valued at up to $200 billion. technews.tw reports the deal's total value is projected to exceed $200 billion by 2030.
No. ctee.com.tw reports TSMC operates a pure-play foundry model and does not itself produce DRAM or HBM products, unlike Samsung, which is supplying both foundry capacity and HBM4/HBM4E memory to Broadcom.
technews.tw reports Samsung won a $16.5 billion contract last year to produce logic chips for Tesla, and that co-CEO Young Hyun Jun said last month he discussed future HBM4E and HBM5 cooperation with NVIDIA CEO Jensen Huang.
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